Magnetoresistance and valley degree of freedom in bulk bismuth
نویسندگان
چکیده
منابع مشابه
Coupling the valley degree of freedom to antiferromagnetic order.
Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics and advanced information technology. Valley, as a new electronic degree of freedom, has received considerable attention in recent years. In this paper, we deve...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2018
ISSN: 0953-8984,1361-648X
DOI: 10.1088/1361-648x/aaced7